Atomic-Scale View of Surface Alloying During the Initial Stages of Oxide Epitaxy on Semiconductor Surfaces

Formation of ordered alkaline earth silicides and germanides are required for growth of crystalline oxides on these materials with perfectly abrupt interfaces. A series of intermediate substitutional structures are observed as these layers form.

Scanning Tunneling Microscopy (STM) shows two ordered phases at ~1/6 monolayer coverage of Sr on Ge(001).