IRG1 : Atomic Scale Design, Control, and Characterization of Oxide Structures

IRG1 Leaders: Eric Altman and Charles Ahn

The Atomic Scale Design, Control, and Characterization of Oxide Structures IRG is based upon novel chemical, electronic, and magneto-electric phenomena that arise at atomically abrupt complex oxide interfaces. Fundamental understanding of these phenomena and their exploitation to create new classes of devices lies at the heart of the intellectual merit. The broader impacts of the research are in discovering and utilizing novel interfacial phenomena to push devices used for communication, computation, and sensing beyond present paradigms. Three grand challenges motivate the research: designing new interfacial systems that impart unique chemical and physical properties; creating new device paradigms based on the novel properties of complex oxide interfaces; and understanding and manipulating strong electronic correlations that are responsible for many of the novel properties of oxide interfaces. The approach of using cross-cutting teams, including teachers, undergraduates, and high school students to carry out the research, broadens the impact to the entire STEM pipeline.

2014

IRG1: Stretching 2D-Silica

IRG1: Heterogeneously integrated ferroelectric optical modulator on silicon with high Pockels’ coefficient