K.M. Rabe, C.H. Ahn and J.-M. Triscone (Eds), types?SGWID=1-40117-22-173719009-0 Physics of Ferroelectrics: A Modern Perspective, (Springer-Verlag, Heidelberg, 2007).
J.-B. Yau, X. Hong, A. Posadas, C.H. Ahn, W. Gao, E. Altman, Y. Bason, L. Klein, M. Sidorov, and Z. Krivokapic, Anisotropic magnetoresistance in colossal magnetoresistive La1-xSrxMnO3 thin films, J. Appl. Phys., 102:103901 (2007).
Y. Bason, L. Klein, H. Wang, J.D. Hoffman, X. Hong, V.E. Henrich and C.H. Ahn, Planar Hall effect in epitaxial thin films of magnetite, J. Appl. Phys. 101, 09J507(2007).
K.M. Rabe, M. Dawber, C. Lichtensteiger, C.H. Ahn and J.-M. Triscone, Modern physics of ferroelectrics: essential background, in Physics of Ferroelectrics: A Modern Perspective, ed. K.M. Rabe, C.H. Ahn and J.-M. Triscone (Springer-Verlag, Heidelberg, 2007), pp. 1-30.
A.B. Posadas, M. Lippmaa, F.J. Walker, M. Dawber, C.H. Ahn and J.-M. Triscone, Growth and novel applications of epitaxial oxide thin films, in Physics of Ferroelectrics: A Modern Perspective, ed. K.M. Rabe, C.H. Ahn, and J.-M. Triscone (Springer-Verlag, Heidelberg, 2007), pp. 219-304.
H. Edgecumbe, G. Osenko, A. Lehman, L. Alter and J. Tully, A partnership inspiring interested in MSE careers: the Center for Research on Interface Structures and Phenomena (CRISP), in Forum on Materials Science and Engineering Education for 2020, ed. L.M. Bartolo, K.C. Chen, M. Grant and G.M. Zenner (Mater. Res. Soc. Proc. 1046E, Warrendale, PA, 2007), 1046-W02-09.
M. Wang, W. He, T.P. Ma, LF. Edge and D.G. Schlom, Electron tunneling spectroscopy study of amorphous films of the gate dielectric candidates LaAlO3 and LaScO3, Appl. Phys. Lett. 90, 053502 (2007).
T.P. Ma , Electrical characterization of advanced gate dielectrics, ECS Trans. 6 (3), 655 (2007).
T.P. Ma, Electrical Characterization of Advanced Gate Dielectrics for Scaled CMOS Technology, ECS Trans. 8 (1), 93 (2007).
H. Tang and S. Ismail-Beigi, Novel precursors for boron nanotubes: the competition of two-center and three-center bonding in boron sheets, Phys. Rev. Lett. 99, 115501 (2007).
L. Song, X. Wang, D. Guo and T.P. Ma, Effective capture cross-sections of traps in high-k gate dielectrics, ECS Trans. 6 (1) 229 (2007) . 
J.S. DaPonte, C. Broadbridge and T. J. Sadowski, Characterization of nanoparticles by computer imaging particle analysis, SPIE Optics East Conference Proceedings 6768 Nanomaterials Synthesis, Interfacing, and Integrating in Devices, Circuits, and Systems II, ed. N.K. Dhar, A.K. Dutta and M.S. Islam, 676807 (2007).
Y. Yun and E.I. Altman, Using ferroelectric poling to change adsorption on oxide surfaces, J. Amer. Chem. Soc. 129, 15684 (2007).
Y. Yun, L. Kampschulte, D. Liao, M. Li andE.I. Altman, Effect of ferroelectric poling on the adsorption of 2-propanol on LiNbO3 (0001), J. Phys. Chem. C 111, 13951 (2007).
Y. Yun, M. Li, D. Liao, L. Kampschulte and E.I. Altman, Geometric and electronic structure of positively and negatively poled LiNbO3 (0001) surfaces, Surf. Sci. 601, 4636 (2007).
Y. Yun, J.Wang andE.I. Altman, Comparison of the reactivity of bulk and surface oxides on Pd(100), J. Catal. 253, 295 (2007).
J. Wang, Y. Yun and E.I. Altman, The plasma oxidation of Pd(100), Surf. Sci. 601 3497, (2007).
J. F. Zheng, W. Tsai, T.D. Lin, Y.J. Lee, C.P. Chen, M. Hong, J. Kwo, S. Cui and T. P. M, Ga2O3(Gd2O3)/Si3N4 dual-layer gate dielectric for InGaAs enhancement mode metal-oxide-semiconductor field-effect transistor with channel inversion, Appl. Phys. Lett. 91, 223502 (2007).
S.J. Robinson, C.L. Perkins, T.-C. Shen, J.R. Tucker, T. Schenkel, X.W. Wang and T.P. Ma, Low-temperature charge transport in Ga-acceptor nanowires implanted by focused-ion beams, Appl. Phys. Lett. 91, 122105 (2007).
C.-C. Yeh, T.P. Ma, N. Ramaswamy, N. Rocklein, D. Gealy, T. Graettinger and K. Min, Frenkel-Poole trap energy extraction of atomic layer deposited Al2O3 and HfxAlyO thin films, Appl. Phys. Lett. 91, 113521 (2007).
W.P. Li, X.W. Wang, Y.X. Liu, S.I. Shim and T.P. Ma, Demonstration of unpinned GaAs surface and surface inversion with gate dielectric made of Si3N4, Appl. Phys. Lett. 90, 193503 (2007).
S. Cui, N. Li, J.F. Zheng, S. Shim and T.P. Ma , Gate quality Al2O3 by molecular-atomic-deposition (MAD) and its potential applications in III-V semiconductor CMOS technology, ECS Trans. 6 (1), 321 (2007).
R.H. Harris, P. Kalra, P. Majhi, M. Hussain, D. Kelly, J. Oh, D. He, C. Smith, J. Barnett, P.D. Kirsch, G. Gebara, J. Jur, D. Lichtenwalner, A. Lubow, T.P. Ma, G. Sung, S. Thompson, B.H. Lee, H.-H. Tseng and R. Jammy, Band-engineered low PMOS VT with high-K/metal gates featured in a dual channel CMOS integration scheme, Proc. 2007 IEEE Symposium on VLSI Technology 154, June (2007).
C. Lichtensteiger, M. Dawber, N. Stucki, J.-M. Triscone, J. Hoffman, J.-B. Yau, C.H. Ahn, L. Despont, P. Aebi, Monodomain to polydomain transition in ferroelectric PbTiO3 thin films with La0.67Sr0.33MnO3 electrodes, Appl. Phys. Lett. 90, 052907 (2007).
T. Sadowski, C.C. Broadbridge, J. DaPonte, Comparison of common segmentation techniques applied to transmission electron microscopy images, in Electron Microscopy Across Hard and Soft Materials, edited by T.J. Balk, A. Minor, A. Porter, J. Plitzko (Mater. Res. Soc. Symp. Proc. 982E, Warrendale, 2007), 0982-KK07-04.
Y. Bason, L Klein, H.-Q. Wang, J. Hoffman, X. Hong, V.E. Henrich and C.H. Ahn, Planar Hall Effect in Epitaxial Thin Films of Magnetite, J. Appl. Phys. 101, 09J507 (2007).
J.L. Pan, Form and structure factors for impedance and reflection from periodic layers, Appl. Opt. 46, 335-345 (2007).
J.L. Pan, Recursion relations for the impedance of periodic layers, Appl. Opt. 46, 2067-2075 (2007).