2008

D.G. Schlom and C.H. Ahn, Clear leap for superconductors, Nature 456, 582 (2008).

 

D. Isarakorn, D. Briand, S. Gariglio, A. Sambri, N. Stucki, J.-M. Triscone, F. Guy, S.-H. Baek, C.-B. Eom, J. W. Reiner, C. H. Ahn and N. F. de Rooij, Establishment of a technology platform for epitaxial piezoelectric MEMS, Eurosensors XXII, 2008, p. 819.

 

D. Isarakorn, D. Briand, S. Gariglio, A. Sambri, N. Stucki, J.-M. Triscone, F. Guy, J.W. Reiner, C.H. Ahn and N.F. de Rooij, A study on epitaxial piezoelectric thin films grown on silicon for energy scavenging applications, Proceedings of PowerMEMS 2008 microEMS2008, Sendai, Japan, November 9-12, (2008), p. 269.

 

P. Paruch, A.-B. Posadas, M. Dawber, C.H. Ahn and P.L. McEuen, Polarization switching using single-walled carbon nanotubes grown on epitaxial ferroelectric thin films,Appl. Phys. Lett. 93, 132901 (2008).

 

H.-Q. Wang, E.I. Altman and V.E. Henrich, Measurement of electronic structure at nanoscale solid–solid interfaces by surface-sensitive electron spectroscopy, Appl. Phys. Lett. 92, 012118 (2008). [Also: Virtual Journal of Nanoscience & Technology 17 (3) (2008).]

 

H.-Q. Wang, E.I. Altman and V.E. Henrich, Interfacial properties between CoO (100) and Fe3O4 (100), Phys. Rev. B 77, 085313 (2008).

 

T.P. Ma, Novel Electrical Characterization for Advanced CMOS Gate Dielectrics, Science in Series F: Information Science, 51, 774-779 (2008)

 

T.P. Ma, Electrical Characterization of High-k Gate Dielectrics on Semiconductors, Applied Surface Science, 255: 672-675 (2008).

 

J.W. Reiner, K.F. Garrity, F.J. Walker, S. Ismail-Beigi and C.H. Ahn, The role of strontium in oxide epitaxy on silicon (001), Phys. Rev. Lett. 101, 105503 (2008).

 

A. Posadas, F.J. Walker, C.H. Ahn, T.L. Goodrich, Z. Cai and K.S. Ziemer, Epitaxial MgO as an alternative gate dielectric for SiC transistor applications, Appl. Phys. Lett. 92, 233511 (2008).

 

N. Li, E. S. Harmon, D. B. Salzman, D. N. Zakharov, J. H. Jeon, E. Stach, J. M. Woodall, X. W. Wang, T. P. Ma, F. Walker, Molecular Beam Epitaxy Growth of InAs and In0.8Ga0.2As Channel Materials on GaAs Substrate for Metal oxide Semiconductor Field Effect Transistor Applications, Journal of Vacuum Science; Technology B: Microelectronics and Nanometer Structures, 26 1187 (2008).

 

J.-F. Zheng, W. Tsai, W. Li, X. Wang, and T. Ma, Demonstration of Enhancement-Mode GaAs MISFET with Channel Inversion using Si3N4 as Gate Dielectric, Appl. Phys. Letts, Vol. 92, 232904, (2008)

 

S. I. Shim, F. C. Yeh, X. W. Wang and T. P. Ma, SONOS-type Flash Memory Cell with Metal-Al2O3-SiN-Si3N4-Si Structure for Low Voltage High Speed Program/Erase Operation, IEEE Electron Device Letters, 29, 512 (2008).

 

D. Dietzel, C. Ritter, T. Mönninghoff, H. Fuchs, A. Schirmeisen and U.D. Schwarz, Frictional duality observed during nanoparticle sliding, Phys. Rev. Lett. 101, 125505-1 (2008).

 

H. Hoelscher, D. Ebeling and U. D. Schwarz, Friction at atomic-scale surface steps: experiment and theory, Phys. Rev. Lett. 101, 246105 (2008).

 

C.-C. Yeh, K. Holtzclaw, N. Ramaswamy, S. Gowda, R. Brewer, T. Graettinger, K. Min, C. Mouli, K. Parat, and T.P. Ma, Time-resolved Programming Current Measurement and Modeling for NAND-type Nanodot Flash Cell, IEEE Electron Device Letters, 29, 778-780 (2008).

 

B.J. Albers, M. Liebmann, T.C. Schwendemann, M.Z. Baykara, M. Heyde, M. Salmeron, E.I. Altman and U.D. Schwarz, Combined low-temperature scanning tunelling/atomic force microscope for atomic resolution imaging and site-specific force spectroscopy, Rev. Sci. Instr. 79, 033704-1 (2008)

 

S. Ismail-Beigi, Electronic excitations in single-walled gallium nitride nanotubes from first principles: dark excitons and unconventional diameter dependences, Phys. Rev. B 77, 035306 (2008).

 

J.W. Reiner, A. Posadas, M. Wang, T.P. Ma and C.H. Ahn, Growth and structural properties of crystalline LaAlO3 on Si (001), Microelectronic Engineering 85, 36 (2008).

 

N. Li, E.S. Harmon, D.B. Salzman, D.N. Zakharov, J.-H. Jeon, E. Stach, J.M. Woodall, X.W. Wand, T.P. Ma and F.J. Walker, Molecular beam epitaxy growth of InAs and In0.8Ga0.2As channel materials on GaAs substrate for metal oxide semiconductor field effect transistor applications, J. Vac. Sci. Tech. B 26:1187, 2008.

 

J.L. Pan, J.E. McManis, M. Gupta, M.P. Young and J.M Woodall, Novel deep-centers for high-performance optical-materials, Appl. Phys. A 90 (1), 105 (2008).